| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of preventing dispersion and fluctuation of the resistance of a resistive element on account of wiring potential in a wiring layer, charges or interface levels in an insulating film, even if a wiring layer runs above the resistance layer, much charges exist in the isolation film coating over the resistance layer, and many interface levels exist in the interface between the isolation film and the resistance layer. SOLUTION: On an n type GaAs resistance layer 12 formed on the surface of an SI-GaAs substrate 11, a Ti/Pt/Au laminated film or a Schottky contact metal layer 14 consisting of an Al film is formed, to coat a large part of the surface of the layer 12 with the exception of the periphery of two ohmic electrodes 13a, 13b, to generate a surface depletion layer 18 having extremely low dispersion of thickness on the surface. In addition, the layer 14 intervenes between a wiring layer 16 or an interlayer dielectric 15 and the layer 12, to block off the wiring potential in the wiring layer 16 and an electric field effect with the charge in the interlayer dielectric 15.
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