| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that a whole remaining pattern becomes small when the fine pattern of not less than the resolution of lithography technology is formed. SOLUTION: A hard mask film whose etching speed differs from a worked film formed on a substrate and becomes a mask with respect to the worked film at the time of etching is formed. A first resist pattern is formed on it by lithography. A hard mask pattern is formed by etching a part except for a part covered by the resist pattern until the upper face of the worked film is exposed. Thus, a hard mask pattern is formed, the first resist pattern is removed, and a second resist pattern is formed on the hard mask pattern by lithography. Anisotropic etching is performed on a part except for a part covered by the second resist pattern. Then, the worked film is etched by making the anisotropically etched hard mask pattern as a mask. |
