| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for securing a stable operation without changing the characteristics of an impurity diffusion layer. SOLUTION: This semiconductor device is provided with a silicon substrate where the impurity diffusion layer is formed on one surface and at the same time a protection film is formed on the impurity diffusion layer, and a glass substrate that is subjected to anode junction to the silicon substrate via the protection film. The protection film consists of at least a silicon oxide film, a first polycrystal silicon film, and a silicon nitride film that are laminated successively from the side of the silicon substrate; and a second polycrystalline silicon film that is subjected to anode junction to the glass substrate.
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