| 摘要 |
PROBLEM TO BE SOLVED: To improve heat dissipation characteristics of a semiconductor laser element to obtain high reliability even under the high-output oscillation of the element. SOLUTION: The semiconductor laser element 25 is constituted by forming a plurality of semiconductor layers 2, 3...10 on a substrate 1. Recessed parts 1a which enter the substrate 1 from the surface opposite to the surface whereupon the semiconductor layers are formed, on the substrate 1 into, and a metal layer 61, such as an Au layer, of a thermal conductivity higher than that of the substrate 1 is embedded in the recessed parts 1a.
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