| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device, which utilizes a crystalline silicon film which does not contain nickel element, obtained by forming the crystalline silicon film divided in two layers and thermally crystallizing in a low-temperature process. SOLUTION: The method comprises the steps of forming a first amorphous silicon film on an insulative surface, forming a silicon oxide film on the fist amorphous silicon film, forming a layer containing a metal for accelerating crystallization on the silicon oxide film, heating and crystallizing the first amorphous silicon film to form a first crystalline film, forming a second amorphous silicon film on the silicon oxide film, and heating the first and second amorphous film to crystalline the second amorphous silicon film, and forms a second crystalline film.
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