| 摘要 |
PROBLEM TO BE SOLVED: To provide an option-setting circuit that precludes the possibility of the causing a breakdown of gate oxide film of transistors(TRs) and can set a mode signal without relying on ion implantation. SOLUTION: At application of power, a PMOS 12 is conductive to bring a node NH to 'H' level and to make an NMOS 13 conductive. Thus, a node NL goes to 'L' level to bring a PMOS 11 to be conductive, thereby confirming the level of the nodes NH, NL. The level of the node NH or NL is outputted through a wireless pattern of a pattern connection section 20 as a mode signal MOD. Since the power supply system is not connected directly to the gates of the TRs, possibility of breakdown of the gate oxide films can be precluded. Moreover, since the level of the node NH or NL is selected and outputted through the wiring pattern of the pattern connection section 20, no ion implantation for ROM formation is required.
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