| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of obtaining a large crystal grain, grown from a single-crystal grain as a seed, or a crystalline semiconductor film, having a large area at the melting temperature of a semiconductor film or lower by suppressing the generation of irregular nuclei to grow controlled crystal nuclei as the speed crystals. SOLUTION: Two or more regions 2A, 2B of a semiconductor film patterned into island-like form are connected at a connection region 3, to form a continuous island-like pattern connected at the connection region 3. A catalyst material is introduced into one 2A of the connected islands of the semiconductor film, to generate a crystal nucleus and then grow crystal grains 6 from the nucleus. One of the crystal grains 6 is grown into the other island-like region 2B of the semiconductor film through the connection region 3. Thereby, large crystal grains grown from a single-crystal nucleus as a seed, or the crystalline semiconductor film of a large area can be obtained at the melting temperature of the semiconductor film or lower.
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