发明名称 ION IMPLANTATION DEVICE AND REPLACEMENT METHOD OF ITS SOURCE HEAD
摘要 PROBLEM TO BE SOLVED: To provide an ion implantation device and a replacement method of its source head which can reduce working hours to put a source head back into the usable state after replacement. SOLUTION: The replacement method of the source head for the ion implantation device includes a step for preparing a source head for replacement equipped with a slit 2 furnished in an arc chamber 1, a lid part 7 for closing up the slit 2, and a filament 3 arranged inside the arc chamber, a step for having filament 3 emit an out-gas and at the same time empty-baking the filament 3 by closing up the slit 2 of the arc chamber 1 with the lid part 7, vacuuming the inside of the arc chamber 1 and conducting the filament 3, and a step for changing a source head of an ion generating source with a replacement source head.
申请公布号 JP2002008581(A) 申请公布日期 2002.01.11
申请号 JP20000186742 申请日期 2000.06.21
申请人 SEIKO EPSON CORP 发明人 KINUGAWA TAKUYA
分类号 C23C14/48;H01J27/08;H01J37/08;H01J37/317;H01L21/265;(IPC1-7):H01J37/317 主分类号 C23C14/48
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