| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of effectively suppressing intrusion to the circuit element area of alkali ion regardless of initial concentration. SOLUTION: An ion isolation area 32 is formed so as to surround the circuit element area 31 of a silicon board 10. The ion isolation area 32 brings a PSG film 13 being an interlayer isolation film into contact with the silicon board 10 through a groove 33 formed on a silicon oxidation film 12, and traverse diffusion to the circuit element area 31 of the alkali ion intruded from a chip edge 21 to the oxidation films 11, 12 is suppressed.
|
