| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor which can suppress the degradation of transistor characteristics due to the channeling of ions. SOLUTION: In a thin film transistor 10 which has a crystallized silicon film 2 with a source-drain region 2a and a channel region 2b formed on a substrate 1, a gate insulation film 3 formed on this crystallized silicon film 2 and a gate electrode 4 formed on the gate insulation film 3, an amorphous layer 5 and a crystalline layer 6 are formed in the gate electrode 4. |
