MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which can make a body contact while electrically isolating between an NMOS transistor and a PMOS transistor by complete isolation. SOLUTION: First, element isolation insulating films 7a to 7c of partial isolation type are formed in a first principal plane of a silicon layer 3. Next, a PMOS transistor, an NMOS transistor, a multilayer wiring structure, a spiral inductor 20 and a pad 22 are formed respectively. Next, a support substrate 23 is formed on the entire surface. Next, a second principal plane of the silicon layer 3 is exposed by removing a silicon substrate 1 and a BOX layer 2. Next, the element separation insulation films 27a to 27b which are connected with the element isolation insulating films 7a, 7b are formed from the second principal plane side of the silicon layer 3. With such a constitution, complete isolation is achieved.