PROCESSING METHOD AND FORMING METHOD FOR VIA HOLE OF ORGANIC SUBSTANCE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To enable wiring in good contact with the top surface of a wiring layer exposed at the bottom of a via hole. SOLUTION: When a hydrogen radical is discharged from a nozzle 25e at a stage where all via holes are formed at necessary places on a substrate W by a laser drill main body 13, the hydrogen radical reduces the bottoms of the respective via holes, so the top surface of a metal conductive layer of Cu, etc., oxidized by desmearing in drill machining is reduced and purified to form a metal surface. Consequently, a connection of low connection resistance having high sticking strength can be obtained at a next film formation stage where metal conductive films for wiring are formed on metal conductive layers exposed at the via hole bottoms.