| 摘要 |
PROBLEM TO BE SOLVED: To make both of complete depletion operation and reduction of parasitic resistance in a source/drain region compatible, without damage to a channel surface, and with easy formation of a gate electrode. SOLUTION: A groove 33 is formed on an oxide film 32 formed on a first silicon substrate 31a. After laminating a second silicon substrate 31b to form a space 34, the substrate 31a is peeled leaving a thickness of 80 nm, to be an SOI layer 37. A hole 41 is formed in one end of the space 34, the SOI layer 37 immediately below a channel area is oxidized from the space 34 side to reduce the thickness to 40 nm. Here, the thickness of the SOI layer 37 in the source/drain region is 75 nm. Thus, both of complete depletion operation and reduction of parasitic resistance in the source/drain region are made compatible. Since the SOI layer 37 is processed from the backside to make the channel region thin, there is realized a transistor with stable characteristics, where the front face is flat, processing of the gate electrode is easy, and there is no damage on the front face of the channel.
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