| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method in which an HEMT and a protective diode with decreased leakage current are formed on the same substrate. SOLUTION: A semiconductor device and its manufacturing method, which include a first active element (HEMT) with a channel layer 4, a carrier supply layer 5b, a high resistance layer 5c, a cap layer 6 including a first conductivity type impurity, a source electrode 8, a drain electrode 9 and a gate electrode 10, and a second active element (a protective diode) with a first conductivity type base region 25 consisting of the same layer with the cap layer 6 and including a second conductivity type impurity, a second conductivity type emitter region 21 and a second conductivity type collector region 22 on a substrate 1, are provided.
|
