| 摘要 |
PROBLEM TO BE SOLVED: To form oxide film having uniform thickness on fuse wiring for modification of wiring provided on a semiconductor device. SOLUTION: Lower layer electrode wiring 11 is formed through an oxide film 2 on the shape part of the fuse wiring 3 on a silicon board 1, and the fuse wiring 3 is formed through an oxide film 12 thereon. An oxide film 4 is formed on the fuse wiring 3, and a guard ring 5 for insulation deterioration prevention is formed on the circumference of the fuse wiring 3. Furthermore, an oxide film 7 is formed on the oxide film 4 and the guard ring 5. Since the part of the fuse wiring 3 is heightened by the lower layer electrode wiring 11, a recess part 7X is formed on the fuse wiring 3 and the oxide film 7 of the guard ring 7. When SOG 8 is applied on the oxide film 7 by using centrifugal force, remaining SOG 8 collects in the recess part 7X, and SOG 8 is applied on the oxide film 7 on the fuse wiring 3 in uniform thickness. It is etched back, and the oxide film 7A of the uniform thickness is obtained.
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