| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device and the semiconductor device formed by its manufacturing method capable of realizing a high speed transistor with less power consumption by making a sufficient film thickness difference, having simple and reliable structure and suppressing the penetration of impurity. SOLUTION: The manufacturing method of the semiconductor device having a plurality of gate insulation film different in thickness on the same chip or a wafer in which the at least two insulation film of the gate insulation film contain nitrogen, has a process for implanting nitrogen in an area requiring the thinnest film in terms of oxide film conversion in the film thickness of the gate insulation film, a process for forming the gate oxide film oxidized in an oxidation atmosphere and different in the film thickness, and a process for nitriding the surface of the gate oxide film and depositing a nitride film.
|
