| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method capable of suppressing the deterioration of flatness in the case that an interlayer insulation film comprising the material of low permittivitty is directly CMP polished. SOLUTION: The manufacturing method of the semiconductor device is provided with a process for forming a wiring pattern 2 on an insulation film 1, a process for forming the material film 3 of the low permittivity on the wiring pattern, a process for reforming the surface of the material film of the low permittivity on an area other than a dense pattern area in which an interval between two adjacent wiring patters out of the wiring patters is 2μm or less, and a process for flattening the material film of the low permittivity by CMP polishing the material film of the low permittivity. The surface reforming reforms the material film of the low permittivity so that polishing speed is slow as compared with the material film of the low permittivity whose surface is not reformed.
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