| 发明名称 |
THIN FILM SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND SILICON FILM |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film semiconductor device having good transistor characteristics. SOLUTION: The thickness of a channel is 500Åor below, and a gate insulation film consists of two layers. A refractive index of the gate insulation film near the channel is larger than that near an electrode.
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| 申请公布号 |
JP2002009088(A) |
申请公布日期 |
2002.01.11 |
| 申请号 |
JP20010117187 |
申请日期 |
2001.04.16 |
| 申请人 |
SEIKO EPSON CORP |
发明人 |
MIYASAKA MITSUTOSHI;TAMASU RITORU |
| 分类号 |
H01L21/283;H01L21/20;H01L21/316;H01L21/336;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/283 |
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