LATERAL BIPOLAR TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a transistor in which a high gain is sustained even if the current density is high. SOLUTION: An n+ base layer 15 has a line pattern extending in the X direction. A plurality of p+ collector layers 16 and p+ emitter layers 17 are provided in a line pattern extending in the Y direction orthogonal to the X direction between the n+ base layers 15. The p+ collector layers 16 and p+ emitter layers 17 are arranged alternately in the X direction. At the opposite ends of such a collector-emitter array, the p+ collector layers 16 are arranged. Since holes are not diffused easily to a part directly under the n+ base layer 15, electrons emitted from the base are prevented from being recombined and the gain is not lowered even in a region of high current density.