SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To eliminate a problem that, because an oxide film is formed thicker on the polysilicon of the material of a gate electrode than on the silicon of which a diffusion layer is formed, it is difficult to remove the oxide film completely at a stroke by a wet process or the like. SOLUTION: This method comprises: a process of coating an element isolation region and at least a part of an element region adjacent to the element isolation region by a resist layer; and a process of completely removing the oxide film on the source and drain regions and on the gate electrode by acidification or anisotropic etching.