| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a field effect transistor which enables the formation of think titanium silicide films by salicide even if the source and drain are shallow. SOLUTION: Since siolicon used for the formation of titanium silicide films 31a and 31b is supplied from a polysilicon film 29, it is possible to form the silicide films 31a and 31b thick even if the source 17a and drain 17b are shallow. Since silicone oxide films 27a and 27b are formed between a titanium film 25 and a polysilicon film 29 on sidewall insulation films 23a and 23b, the silicide reaction can be suppressed on the sidewall insulation films 23a and 23b.
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