发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which eliminates natural oxide film growth difference in wafer surfaces, to make it less likely for natural oxide films to form, when a plurality of wafers are carried in a reaction tube. SOLUTION: The semiconductor manufacturing apparatus body 100 has a movable outer tube 21, separate from a reaction tube 11, and a fork 15 is disposed in the tube 21 and connected via a support 23 to an drive shaft 24 outside the outer tube 21. The fork 15 guides the boat 14 for mounting a plurality of wafers WF into/out of an opening 12 of the tube 11. A nozzle mechanism 25 is provided for sending inert gas, at least into the fork 15 and blowing it out near the mount of the wafers WF, and an N2 purge gas feed hole 26 is provided for feeding the inert gas into the outer tube 21, thereby uniformly feeding N2 gas between the wafers, WF, when a shutter 13 is opened for connection.
申请公布号 JP2002008987(A) 申请公布日期 2002.01.11
申请号 JP20000186744 申请日期 2000.06.21
申请人 SEIKO EPSON CORP 发明人 YASUHARA MASANORI
分类号 C23C16/44;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/44
代理机构 代理人
主权项
地址