ETCHING METHOD AND ETCHING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method and a device for stably etching noble metal and a substance including noble metal. SOLUTION: Gas is evacuated by a pump 3 as an evacuation device while prescribed gas is introduced into a vacuum container 1 from a gas supply device 2. The high frequency power of 100 MHz is supplied to an antenna 5 which is protrusively installed in the vacuum container 1 by an antenna high frequency power source 4 while the vacuum container 1 is kept to prescribed pressure. Thus, plasma is generated in the vacuum container 1 and a substrate 7 placed on a substrate electrode 6 is etched. When self-bias voltage is set to -310 V, a substrate temperature to 10 deg.C and the substrate with iridium whose film thickness is 200 nm is etched in the device, a deposit film formed on an etching sidewall can easily be removed in a subsequent washing process.