| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device and its manufacturing method realizing multi-value while avoiding the difficulty of control due to the presence of various traps. SOLUTION: The non-volatile semiconductor device has a semiconductor board 11 having a channel shaped area, a charge accumulation layer 14a in which the two or more layers of tunnel layers (21a, 24a, 27a) formed on the upper layer of the channel shaped area and in which the tunnel passage of charge is possible in a prescribed electric charge and trap layers (23a, 26a, 29a) accumulating charge are mutually laminated respectively, a gate electrode 15a formed on the upper layer of a charge accumulation layer 14a, and source drain areas (12a, 13a) formed by being connected to the channel shaped area in the semiconductor board 11 on both the side parts of the gate electrodes 15a. Data stored by regulating threshold voltage in response to an injection charge amount to each trap layer (23a, 26a, 29a) of the charge accumulation layer 14a.
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