| 摘要 |
<p>PROBLEM TO BE SOLVED: To make it possible to increase the number of times of rewriting individual non-volatile memory cell without increasing extremely the time required or programming or erasing as well as chip area. SOLUTION: This device is made of a semiconductor including non-volatile memories and provided with means 20, 30, 70 storing data in a non-volatile memory based on rewriting conditions stored in the semiconductor device, a sense amplifier 40, a means 50 judging whether storage operation is performed correctly or not by comparing data externally inputted with data read out from a non-volatile memory, and a means 70 setting and storing new rewriting conditions based on rewriting conditions stored in the semiconductor device when storage operation is not performed correctly in the non-volatile memory.</p> |
