| 摘要 |
PROBLEM TO BE SOLVED: To improve backward characteristics without sacrificing forward characteristics in a Schottky barrier diode. SOLUTION: In a Schottky barrier diode 1 where an epitaxial layer 3 and a metal layer 4 are provided in order on a silicon substrate 2, concentration NSBD(x) of the impurity of the epitaxial layer 3 increases toward the silicon substrate 2 from the surface of the epitaxial layer 3 according to an expression (1-1), namely NSBD(x)=NL+NH(x/WNSBD)2. In the expression, WNSBD is the thickness of a concentration distribution range that follows the expression (1-1), x(0<x<=WNSBD) indicates thickness within the above range, NSBD(x) indicates impurity concentration at an arbitrary x, and NL indicates concentration at a position closest to the side of the metal layer 4, and NH is concentration at a position closest to the side of the silicon substrate 2. |
