| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve a problem that input heat which changes with time cannot be extracted with good responsiveness and a wafer temperature cannot kept to be constant at the heating time of heater or plasma heating in conventional technology, that temperature distribution in a wafer face is remarkably deteriorated at the time of processing the wafer at the high temperature, or the plasma processing of good quality is impossible since the heating-up temperature of the wafer cannot be made to be sufficiently high. SOLUTION: In the processing device of a sample, which plasma-processes the sample, while the temperature of the sample kept by an adsorbing device is controlled, the adsorbing device has a holding member for holding the sample and a cooling member cooling the sample. A recessed part for forming a first heat transmission gas chamber part between the cooling member and the holding member is installed in the cooling member. A recessed part for forming a second heat transmission gas chamber part between the holding member and the sample in a state where the sample is kept is installed. The first or second heat transmission gas chamber part is constituted of a plurality of heat transmission gas chambers that can independently be pressure-controlled.</p> |
