发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit provided with a test circuit in which an abnormal contact resistance part is detected by a circuit incorporated in a semiconductor chip, an ohmic characteristic of the contact part is restored by applying over-voltage, and a defective chip is relieved. SOLUTION: In a semiconductor substrate, an abnormal contact resistance part is detected by switching potentials of a node CP1, a node CP2, and a P well to Vxx, GND, Vxx/2 respectively by an external control signal through respective switching circuits, while over-voltage can be applied to said part, therefore, dielectric breakdown of a parasitic capacitor of a defective CP contact can be performed, while preventing the dielectric breakdown of a dielectric film 53 of a capacitor.
申请公布号 JP2002008399(A) 申请公布日期 2002.01.11
申请号 JP20000189593 申请日期 2000.06.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 MORIHARA TOSHINORI;SHIMANO HIROKI
分类号 G11C29/14;G11C5/06;G11C29/50;(IPC1-7):G11C29/00 主分类号 G11C29/14
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