| 摘要 |
PURPOSE: A method for forming a polysilicon plug of a semiconductor device is provided to improve stabilization and reliability of a semiconductor device by preventing a loss of a polysilicon layer and the generation of a key hole. CONSTITUTION: A planarized interlayer dielectric(21) is formed on a silicon substrate(20) including a lower layer. A contact hole is formed by etching selectively the planarized interlayer dielectric(21). A polysilicon layer(22) is deposited on the whole surface of the above structure. An etch back process of the polysilicon layer is performed by using simultaneously a down stream microwave method and an RF(Radio Frequency) bias plasma method. The etch back process includes a main etch process and an over-etch process. The main etch process is performed by using a microwave power of 800 to 1200W and an RF power of 100 to 300W. The over-etch process is performed by using the microwave power of 500 to 800W and the RF power of 300 to 700W.
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