METHOD FOR FORMING TITANIUM SILICIDE OHMIC CONTACT LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a titanium silicide ohmic contact layer of a semiconductor device is provided to prevent the damage of a junction region and a condensing effect in a rapid thermal process for forming a titanium silicide. CONSTITUTION: A contact hole for exposing a source/drain junction region(21) within a silicon substrate(20) is formed by etching selectively an interlayer insulating layer(22). The substrate(20) is cleaned by a cleaning process. A Ti layer(23), and a TiAlN layer(24) are formed on a whole surface of the above structure. A nitrogen ion implantation layer is formed by implanting nitrogen ions into a boundary face between the Ti layer(23) and the TiAlN layer(24). A titanium silicide layer(23A) is formed on the source/drain junction region(21) by performing a rapid thermal process under a temperature of 650 to 900 degrees centigrade and an N2 atmosphere for 10 to 100 seconds. A barrier metal layer(26) and a metal layer(27) are deposited thereon. A metal line is formed by patterning the barrier metal layer(26).