| 摘要 |
A semiconductor apparatus is provided which includes a lateral high-voltage semiconductor device which comprises a silicon substrate, a pair of main electrodes formed on the silicon substrate, and a silicon oxide film formed on the silicon substrate, such that at least a part of the silicon oxide film is located between the main electrodes. The semiconductor device further includes a voltage withstanding structure formed on the silicon oxide film, which structure includes a first silicon nitride film having a refractive index of not lower than 2.8, and a second silicon nitride film formed on the first silicon nitride film and having a refractive index of not higher than 2.2. |
