A LASER DIODE AND METHOD OF MANUFACTURE OF THE DIODE USING ASURFACE GALLIUM NITRIDE SEED

摘要

Laser diodes are fabricated by growing epitaxial layers and forming electrod es on a low dislocation density GaN single crystal substrates which are produced b y slicing a GaN single crystal ingot in the planes parallel to the growing direction. Threading dislocations appearing on the surface of the GaN substrate mainly extend in parallel to the surface. The resonator mirrors are made by natural cleavage.