METHOD FOR FABRICATING DOUBLE LAYER SILICON DEVICE HAVING GATE STRUCTURE OF CHANNEL ENVELOPMENT TYPE

摘要

PURPOSE: A method for fabricating a double layer silicon device having a gate structure of a channel envelopment type is provided to remove a floating body effect by forming a gate around a channel region. CONSTITUTION: A field oxide layer is formed by using a photo etch method and a chemical mechanical polishing method(S10). A photo-resist layer is formed by using the photo etch method(S20). Ge ions are implanted into a boundary between an upper silicon layer and the field oxide layer(S20). The field oxide layer is removed by using the photo-resist layer as a mask(S30). A part of the field oxide layer is etched(S40). A buried oxide layer is removed from a lower portion of the upper silicon layer by using an etch solution(S40). The photo-resist layer is removed(S50). An empty space is formed in the lower portion of the upper silicon layer(S50). A gate oxide layer is formed and a doped polysilicon layer is deposited thereon(S60). A gate pattern is formed by using the photo etch method(S60).