| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to simplify a fabricating process by using a dual damascene structure. CONSTITUTION: The first etch stop layer(42), the first insulating layer(43), the second etch stop layer(44), the second insulating layer(45), and the third etch stop layer are sequentially formed on a semiconductor substrate(41). An opening portion is performed by etching the third etch stop layer selectively. The opening portion and a surface of the third etch stop layer are exposed by forming a mask layer. The third etch stop layer, the second insulating layer(45), and the second etch stop layer(44) are selectively removed by using the mask layer as a mask. The mask layer is removed. A contact hole is formed by etching selectively the third etch stop layer, the second insulating layer(45), the second etch stop layer(44), the first insulating layer(43), and the first etch stop layer(42). A metal line(50) of a dual damascene structure is formed on an inside of the contact hole.
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