| 摘要 |
PURPOSE: A method for forming a bit line of a semiconductor device is provided to prevent a lifting of the bit line due to thermal budget caused by overetch of a word line insulating layer in a corner cell region during the formation of the bit line. CONSTITUTION: After the word line insulating layer(33) is formed on a semiconductor substrate(31), several layers(35-38) for the bit line are formed thereon. The layers(35-38) are then selectively etched in the corner cell region by using a wafer edge exposure mask, and further selectively etched in a main cell region to form the bit line by using a bit line mask. Next, the first bit line insulating layer(41) with good gap-fill property is formed to supplement a part(33a) of the word line insulating layer(33) overetched in the corner cell region, and then the second bit line insulating layer(42a) with good step coverage property is formed thereon. Thereafter, the second bit line insulating layer(42a) is polished while preventing the lifting of the bit line.
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