发明名称 METHOD FOR PRODUCING A SEMICONDUCTOR CHIP WITH AN ELECTRICAL PROPERTY THAT CAN BE ADJUSTED AFTER THE SILICON PROCESS
摘要 According to the invention, an individually dimensioned, external conductive layer is applied to the finished circuits, respectively, after testing. The values for a particular electrical characteristic of the circuits, which vary unreliably among the multiple circuits at first after the silicon process, can then be adjusted to a chosen, essentially uniform value. The external layer is dimensioned individually in accordance with the electrical test value established, respectively. This post-adjustment renders redesigning unnecessary.
申请公布号 WO0115217(A3) 申请公布日期 2002.01.10
申请号 WO2000DE02899 申请日期 2000.08.24
申请人 INFINEON TECHNOLOGIES AG;PUESCHNER, FRANK;HAERING, MARTIN 发明人 PUESCHNER, FRANK;HAERING, MARTIN
分类号 H01L21/66;H01L23/522 主分类号 H01L21/66
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