| 摘要 |
PURPOSE: A stencil mask for electronic beam projection lithography is provided to complement easily a variation of pattern threshold value due to nearest effect by forming a scatter layer having a different thickness partially. CONSTITUTION: A stencil mask(20) includes a frame(11), membrane(12), and a scatter layer. An entire device is supported by the frame(11). The membrane can make the stress occurred due to irradiation of the electronic beam to equilibrium entirely. The scatter layer is placed on the membrane, and scatters the beam in any angle. The scatter layer is formed in which a thickness of an edge portion of a cell block is thinner than a thickness of the center portion thereof. |
