III GROUP NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

A III Group compound semiconductor light emitting element which emits a light of a wave length of 360 to 550 nm and has a light emitting layer containing portions comprising AlGaN layers and, sandwiched between them, an InGaN layer. The output of the light emitting element is improved by controlling the film thickness, growth rate and growth temperature for the InGaN layer as a well layer and the film thickness of the AlGaN layer so as to optimize them.