| 摘要 |
Two-way radio semiconductor structures and methods for making such structures are provided. The integrated structure includes a single monolithic integrated circuit (401) on which processing circuitry, such as a CPU (420) and a DSP (418), is fabricated within a silicon substrate structure. Through appropriate use of an intervening layer, compound semiconductor material, such as GaAs, can be layered atop the silicon substrate. That compound material can then be utilized for the RF circuits in the radio. Thus, the RF circuits and the processing circuits may be fabricated on a single IC, thereby reducing power and size requirements of the assembled device. |
