| 摘要 |
PURPOSE: A repair method of a memory device is provided, which performs a repair by cutting a corresponding fuse by a selective etching without using a laser when repairing a defective memory cell with a redundancy cell. CONSTITUTION: A repair is performed by replacing a defective memory cell with a redundancy cell according to the test result of the memory cell through a probe test. In order to cut a fuse to replace the defective cell with the redundancy cell, a photoresist film(30) is deposited on an insulation layer(20) where a fuse(10) is formed. Then, a repair pattern is formed through an exposure on an upper layer of the fuse to be removed. The insulation layer is revealed by removing the exposed photoresist film through a developing process. Then, the repair is completed by removing the photoresist film after etching the fuse through a selective etching process.
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