| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to improve an interfacial characteristic between a dielectric layer and a metal electrode and to guarantee a stable capacitor characteristic, by preventing a metal electrode barrier layer from being exposed in depositing the dielectric layer so that an abnormal reaction between the dielectric layer and the metal electrode barrier layer is basically prevented. CONSTITUTION: A bitline(53) and the second plug for a storage electrode are formed on the first interlayer dielectric(47) having the first plug for the storage electrode. The bitline has an insulation layer spacer having a hard mask layer. The second plug has a barrier layer and a metal as a plug material. The second interlayer dielectric(63) is evaporated on the entire structure, and is planarized to expose the second plug. The storage electrode(64) coupled to the second plug is formed. The dielectric layer(65) is formed on the storage electrode.
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