Semiconductor memory device and production method of the same

摘要

A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a TaxSi1-xNy film or a HfxSi1-xNy film (where 0.2<x<1 and 0<y<1). The lower electrode includes an Ir film and an IrO2 film which are sequentially formed.