发明名称 |
A NOVEL CAPACITIVELY COUPLED DTMOS ON SOI |
摘要 |
A transistor structure (50) is provided comprising a source region (82, 86) having a N<+> drain region (80) and a N' lightly doped drain region (80) and a N' lightly doped drain region (84). AP<++> heavily doped (110) is provided. The P<++> region (110) resides alongside at least a portion of at least one of the N<-> lightly doped source region (86) and N<-> lightly doped drain region (84). AP<+> body region (120, 158) resides below a gate (90, 156) of the device (50) and between the source (82, 86) and drain (80, 84) regions. The P<++> heavily doped region (110) provides a capacitive coupling between a body region (120, 158) and the gate (90, 156) of the device (50) and form a capacitive voltage divider with the junction capacitance of the device (50). |
申请公布号 |
WO0203468(A2) |
申请公布日期 |
2002.01.10 |
申请号 |
WO2001US14127 |
申请日期 |
2001.05.01 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KRISHNAN, SRINATH;HOLST, JOHN, C.;YU, BIN |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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