| 摘要 |
<p>A semiconductor device where a capacitive element is provided on a semiconductor substrate and its manufacturing method are disclosed. A substantial lower electrode is formed through a first insulating film on a semiconductor substrate. A peripheral electrode, namely, a peripheral part around the lower electrode and a dummy electrode are formed integrally with the lower electrode or separately from it. The top surface of the peripheral electrode is higher than that of the lower electrode. An upper electrode is formed through a dielectric film on the lower electrode. At least the top surface of the dielectric film is lower than that of the peripheral electrode. Thus a capacitive element is fabricated. The recess encompassed by the peripheral electrode is filled with a planarization film. In such a way at least the dielectric film is not damaged when the planarization film is formed, thereby manufacturing a capacitive element with less characteristic variation and with high reliability.</p> |
