MANUFACTURING METHOD OF TFT-LCD

摘要

PURPOSE: A manufacturing method of a TFT-LCD(Thin Film Transistor Liquid Crystal Display) is provided to simplify the entire manufacturing process and to obtain regular TFT characteristics by removing a doped amorphous silicon film with H2 plasma. CONSTITUTION: A first metal film is deposited on a glass substrate(21) and patterned by photolithography to form a gate electrode(22) on the glass substrate. A gate insulating film(23) of SiONx is coated to cover the gate electrode. Then, an insulating film(24), a non-doped amorphous silicon film(25) and a doped amorphous silicon film(26) are deposited sequentially to form an active area on the gate insulating film. A photosensitive pattern is formed on a TFT-forming area. The doped amorphous silicon film, the non-doped amorphous silicon film and the insulating film(24) are etched sequentially by using the photosensitive pattern as an etching wall. After a second metal film is formed, a photosensitive film pattern is formed on the TFT-forming area. The second metal film is etched with the pattern as an etching wall to form source/drain electrodes(27b). The doped amorphous silicon film is removed by H2 plasma processor, and then a passivation layer(28) is deposited. The doped amorphous silicon film having thickness of lower than 100 angstroms is etched to from a back channel. Thereby, a TFT(30) of BCE(Back Channel Etch) structure is formed.