| 摘要 |
PURPOSE: A method for manufacturing a high voltage semiconductor device is provided to prevent a characteristic of a gate oxide layer from being degraded and to improve reliability, by forming one on-chip structure composed of a low voltage driving device and a high voltage driving device. CONSTITUTION: A transistor composed of a source, a drain and a gate electrode is formed on a high voltage driving device formation region of a semiconductor substrate(10) by using a process for forming a low voltage transistor. An interlayer dielectric is formed on the resultant structure including the transistor. The interlayer dielectric is etched to expose the drain and to form a drain contact hole. The drain contact hole is filled with a high resistance thin film to form a plug for the drain. The interlayer dielectric is etched to expose the source so that a source contact hole is formed. A tungsten layer is formed on the resultant structure including the source contact hole. A metal layer is formed on the tungsten layer. The metal layer is patterned to form a metal interconnection(120).
|
