| 摘要 |
PURPOSE: A device isolating layer formation method of a semiconductor device is provided to prevent loss of an oxide layer due to penetration of an etching reagent in a cleaning process and an etching process, thereby efficiently preventing a formation of an arc at a boundary surface due to the loss of the oxide layer. CONSTITUTION: After forming sequentially a pad oxide layer and a nitride layer on a substrate(11), a trench is formed by patterning to expose the substrate(11) defining a device isolating region. After cleaning a surface of the resultant structure, the trench is filled by a first oxide layer. After forming an oxidation aluminum layer(16) on the surface of the resultant structure, a heat treatment is performed. A second oxide layer is formed to fill the trench. Then, the second oxide layer and the oxidation aluminum layer is removed, and the surface of the resultant structure is polished. The remaining nitride layer and the pad oxide layer are removed sequentially.
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