| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to guarantee sufficient capacitance for high integration, by using a high dielectric material and a metal of a low corrosion rate while not reducing step coverage. CONSTITUTION: A hard mask layer(1) and a bitline having an insulation layer spacer(2) are formed. A storage electrode contact plug is formed between the bitlines. An interlayer dielectric is evaporated on the resultant structure, and is planarization-etched to fill an empty space between the bitlines. A sacrificial oxide layer is formed, and is patterned by using a storage electrode mask. A dielectric layer spacer is formed on the sidewall of the sacrificial oxide layer. The sacrificial oxide layer is eliminated. Upper and lower electrode materials(8) of the capacitor are evaporated on the entire surface. A photoresist layer is applied on the entire surface. The photoresist layer and the upper/lower electrode materials of the capacitor are planarization-etched to expose the dielectric layer spacer. The photoresist layer is removed.
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