| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to form a metal wiring contact hole while a metal wiring contact hole while etching interlayer dielectric so that a metal wiring contact can be formed without an additional photo-process. CONSTITUTION: A first interlayer dielectric having a metal wring contact plug for interconnecting a metal wiring contact plugs of a cell region and a peripheral circuit region is formed on a substrate including the resultant structure. A third interlayer dielectric pattern(20b) including a trench for exposing a storage electrode(24b) and a metal interconnection contact(26b) at the cell region and the peripheral region respectively, a conductive layer pattern, and a second interlayer dielectric pattern(16b) are formed on the resultant structure, wherein the conductive pattern is used as a plate electrode. After forming a dielectric layer and a second metal layer on the resultant structure sequentially, by etching entirely the dielectric layer and the second metal layer, a dielectric layer pattern and the storage electrode are formed on a sidewall of the resultant structures. At the same time, an etching process for exposing the metal interconnection contact plug is performed. After forming a third metal layer on the resultant structure, a metal interconnection contact(26b) for connecting the metal interconnection contact plug(14b) is formed by etching entirely the third metal layer.
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