| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to permit a simultaneous formation of a contact and a capacitor by previously forming a void at a portion to be etched when the contact is formed in a self-aligned manner. CONSTITUTION: After a word line and a spacer(3) thereof are formed on a semiconductor substrate(1), the first insulating layer(4) and a plug polysilicon(5) are formed and then the second insulating layer(6), a bit line(8) and a spacer(9) thereof are formed. Next, the third insulating layer(10) is deposited and the void(7) is formed between the adjacent bit lines(8). The third insulating layer(10) is then etched to expose the plug polysilicon(5). Next, the fourth insulating layer(14) is deposited on an entire structure and planarized. Then, an etch barrier(15) and a storage oxide layer(16) are deposited and etched along with the fourth and the third insulating layers(14,10) to expose the plug polysilicon(5). Thereafter, a capacitor is formed.
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